Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron
sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis
and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy
(EDX). Titanium carbide (TiC) structure was obtained by deposition of sputtered carbon atoms and clusters
to the resistively heated titanium substrate surface with temperatures 700 °C, 800 °C, 900 °C and
1000 °C. The XRD analysis showed that the formation of TiC structure is take place when the substrate is
heated to 1000 °C. The Raman spectroscopy showed that when the incident power of laser is 100 %
(35 mW) the structure is unstable in samples with the substrate temperatures 700 °C, 800 °C and 900 °C
and the most stable titanium carbide structure is created when the substrate temperature is 1000 °C
