To model the quantum behavior of current carriers in heterogeneous nanostructures, different potential wells and barriers are widely used. Of particular interest are those (including artificial ones) for which the corresponding Schrödinger equation can be solved exactly. One of them is an infinitely deep potential well with a flat bottom defined as () = ∞ for || ≥ and () = 0 for || 0) if || < . Physically, this means that the particle in the well is subjected to an external force in the -direction
