We have calculated radii and lifetime of the molten regions or the regions heated
to the melting point that are formed under irradiation of amorphous SiO2 and Si3N4 with
swift ions. A computer simulation was carried out on the base of thermal spike model. A
comparison of calculated track parameters with ion track etching data have been made
for these materials.
It is shown that an existence of molten region along swift ion trajectory may be a
criterion for a track “etchability” in the case of SiO2. In the same conditions of chemical
etching diameter of etched tracks in SiO2 is proportional to the radius and lifetime of the
molten region. This information is important for a correct choice of irradiation regime
aimed at preparation of nanoporous layers with high pore density ( 10 10 cm-2).
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2087