Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation technique
and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties
were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer.
The increase in electron dose tends to decrease in transmittance and increase in refractive index of thin
film. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with very high absorption of
optical energy at 550 nm wavelength. The samples irradiated 800 Gy tends to redeem the pristine properties.
Optical band gap for irradiated thin film were direct and in the range of 2.66 – 2.69 eV