In this article, we report on the detailed high resolution x-ray diffraction data analysis of three GaAs films deposited by metal organic vapour phase epitaxy on Si substrates. In the GaAs/Si films the effect of anti phase domains is seen by the selective broadening of (002) and (006) reflections. Further as the (006) reflection is a very weak reflection, such films cannot be analyzed by conventional Williamson-Hall plots using (002), (004) and (006) reflections. We find that using (111), (333) and (444) reflections it is possible to use the standard Williamson-Hall analysis and extract parameters related to the microstructure of the films. We have also carried out the analysis to determine the tilt and twist between the mosaic blocks after correcting for the effects of the finite lateral coherence length.
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