CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
research
Nucleation and growth of platelets in hydrogen-ion-implanted silicon
Authors
JP Hirth
T Höchbauer
+5 more
T Lafford
JK Lee
A Misra
M Nastasi
M Ridgway
Publication date
5 July 2005
Publisher
'AIP Publishing'
Doi
Cite
Abstract
H ion implantation into crystalline Si is known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation is critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here we show that H-platelet formation is controlled by the depth of the radiation-induced damage and then develop a model that considers the influence of stress to correctly predict platelet orientation and the depth at which platelet nucleation density is a maximum. © 2005 American Institute of Physics
Similar works
Full text
Open in the Core reader
Download PDF
Available Versions
D-Scholarship@Pitt
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:d-scholarship.pitt.edu:234...
Last time updated on 10/05/2016