Engineering Nanowire n-MOSFETs at L-g \u3c 8 nm

Abstract

As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (L-g) are scaled to lengths shorter than L-g \u3c 8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario, a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal-orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at L-g \u3c 8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON-state currents in ultrascaled nanowire MOSFETs