Capacitive silicon pressure sensor for invasive measurement of blood pressure

Abstract

The pressure sensor presented in this paper was developed for invasive measurement of blood pressure. The special requirements for this application are small sensor devices, suitability for a high yield mass production and on chip integration with electronic circuits. This can be met by using planar processing steps, which are compatible to standard CMOS processing, like wafer backside etching are avoided. A capacitive pressure sensor with a polysilicon membrane is appropriate for this kind of fabrication