Verfahren zur Bestimmung von Abstaenden zwischen einkristallinen Prueflingen und flaechenhaften Detektionseinrichtungen fuer Roentgenstrahlung

Abstract

The method involves irradiating the surface of the test object perpendicularly with a primary X-ray beam. The secondary X-rays diffracted by the object are detected by the detection device. The distance between the primary and secondary beams in the plane of the detection device is determined for secondary X-ray beams diffracted at different families of crystal structure main planes. After this the angle between the primary and secondary X-rays is determined for the different secondary X-ray beams and used to derive the distance between the test object and detection device. ADVANTAGE - Enables diffraction angles to be determined with accuracy required for detecting intrinsic voltage states and grid parameter changes