Verfahren zur Herstellung von Gruppe-III-Nitrid-Volumenkristallen oder-Kristallschichten aus Metallschmelzen

Abstract

DE1004048454 A UPAB: 20060505 NOVELTY - A process for producing crystal layers or volume crystals out of group 3 nitrides or their mixtures, comprises precipitating from a group 3 metal melt onto a seed crystal placed in the melt. Nitrogen is supplied to the melt at a pressure P. After the end of the primary process phase the metal melt is cooled from a primary temperature (T1) to a secondary temperature (T2). The melt is warmed again at the end of the second process phase. USE - The process is used to produce crystal layers or volume crystals in semiconductor technology. ADVANTAGE - The process is simple and effective

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