A plane-parallel electrode discharge device, operating with CF4 at 0.05-0.5 torr, 13.5 MHz, and input power 0.05-1 W/cm2 was used to etch a SiO2 layer on a Si substrate. Electron densities, etch rates, and intensity ratios of spectral lines were detd. Insight was obtained into the geometry of the discharge and the occurrence of various species in it. [on SciFinder (R)
