Ultra high voltage electron microscopy study of {113}-defect generation in Si nanowires

Abstract

Results are presented of a study of {113}-defect formation in Si nanowires with diameters ranging from 50 to 500 nm. The Si nanowires, used for the processing of tunnel-FET's, are etched into a moderately doped epitaxial Si layer on a heavily doped n-type Si substrate. {113}- defects are created in situ by 2 MeV e-irradiation at temperatures between room temperature and 375 ºC in an ultra high voltage electron microscope. The observations are discussed in the frame of intrinsic point defect out-diffusion and interaction with dopant atoms