Caymax, M

Dekoster, J

Guo, W

Hugo, B

Merckling, C

Olivier, R

Paladugu, M

Pantouvaki, M

Tian, B

Van Campenhout, J

Van Thourhout, Dries

Wang, Zhechao

Ghent University Academic Bibliography

(1) Title of the paper High Quality InP Localized Growth on Silicon for Photonics Applications  (2) Name, affiliation, and email of each author   Affiliation:  1. INTEC-department, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, Ghent 9000, Belgium 2. IMEC, Kapeldreef 75  3001 Heverlee, Belgium  Zhechao Wang1, Zhechao.Wang@intec.ugent.be Marianna Pantouvaki2, pantouvm@imec.be Mohan Paladugu2, mo.paladugu@gmail.com Bin Tian1, Bin.Tian@intec.ugent.be Richard Olivier2, Olivier.Richard@imec.be  Bender Hugo2, Hugo.Bender@imec.be Clement Merckling2, mercklin@imec.be Weiming Guo2, weiming@imec.be Johan Dekoster2, dekoster@imec.be Matty Caymax2, caymax@imec.be  Joris Van Campenhout2, jvcampen@imec.be Dries Van Thourhout1, dries.vanthourhout@intec.UGent.be  (3) Mailing address Ghent University Dept. of Information Technology (INTEC) Sint-Pietersnieuwstraat 41 9000 Gent Belgium  (4) Telephone/ Fax numbers Tel: +32-9-264 34 46 Fax: +32-9-264 35 93  (5) Corresponding author and Presenting author Corresponding: Zhechao Wang Presenting: Zhechao Wang  (6) Topic or Session organizer, if applicable Silicon Phontonics, Liu Liu  (7) State if poster presentation is preferred Oral presentation is preferred, but poster is also acceptable    High Quality InP Localized Growth on (001) Silicon Substrate for Photonics Applications  Over the last decade, “silicon photonics” has evolved from a relatively new topic to one of the most competitive research field. It holds great promises to many applications, such as optical interconnects, sensing, and next generation commercial electronics. Great achievements have been made, although the indirect bandgap nature of silicon hinders the realization of active devices. Besides the efforts of bonding IIIVs materials on silicon for active applications, the possibility of integrating IIIVs on silicon in the epitaxy level reattracts enormous interests from the material science society. In this work, we present recent results of localized InP growth on exactly [001] oriented silicon substrate.       In order to accommodate the large lattice mismatch between InP and silicon, we start the epitaxial growth from a (001) silicon substrate covered by a patterned SiO2 buffer. Modified shallow trench isolation (STI) process available in the IMEC 130 nm CMOS line is utilized to fabricate nano-scale holes and trenches in the SiO2 layer. Thanks to the defect necking effect of a high aspect ratio trenches, most of the threading dislocations that propagates upwards in the trench will be annihilated by the trench sidewall, leaving the InP defect-free in the upper part of the trench. After the localized epitaxial growth that was carried out in a metalorganic vapour phase epitaxy (MOCVD) reactor, the material quality is analyzed by photoluminescence (PL) and transmission electron microcopy (TEM).      Fig. 1a shows the schematics of the SiO2 mask: trenches that are aligned along different orientations will be filled by InP during the growth. Fig. 1b shows the PL image recorded by an ordinary silicon camera. Several images are joined together to give the full view of the PL emission from all the trenches. It is very interesting to find that the material quality is highly trench orientation dependent, and a rotation periodicity of 45° can be found. InP that is grown in [110] and [100] oriented trenches give the lowest PL intensity, while the InP grown in the [130] orientation family gives extremely high PL intensity. TEM analysis of the [130] oriented trench (see Fig. 1c) shows that all the dislocations and anti-phase boundaries (APBs) are confined in the bottom trench, and the large lateral overgrown InP “cap” on top is ideal for IIIV active devices integrated on silicon. Figure 1. (a) Schematics of the SiO2 mask that covers the sil icon substrate. (b) Camera image of the PL emission from different trenches. (c) TEM image of the InP that is grown in the [130] oriented SiO 2 trench.     We also performed InP growth in circle-shaped trenches. Short but thick InP nanowire cavities are successfully obtained, and it is striking to find that although the direct contact of InP on silicon tends to introduce high optical loss, lasing has been achieved by optical pumping under room temperature. 

High quality InP localized growth on (001) silicon substrate for photonics applications

https://biblio.ugent.be/publication/4249889/file/4249896

High quality InP localized growth on (001) silicon substrate for photonics applications

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Ghent University Academic Bibliography