Depla, Diederik

Leroy, Wouter

Strijckmans, Koen

English

Ghent University Academic Bibliography

Poster: Plasma and Ion Etching and Activation Monday, September 13, 2012PO1050Modeling the time dependency of the reactive sputter processKoen Strijckmans1, Wouter Leroy1, Diederik Depla11Ghent University, Gent, Belgiumkoen.strijckmans@ugent.beWhen adding a reactive gas (like oxygen or nitrogen) to the sputter process,a wealth of new technological opportunities arises. Nevertheless theinclusion of this reactive species introduces a so-called poisoningmechanism of the target which seriously decreases the deposition rate. Asthe transition to the poisoned mode typically evolves in a timescale ofseconds up to minutes, which is slow compared to discharge relatedprocesses, the use of time-expensive detailed codes should be avoided. Anaccurate and fast model which describes the time dependency of thispoisoning effect is therefore needed.A non-stationary RSD (Reactive Sputter Deposition) model is thereforeproposed. It is based on a stationary version which was already applied inearlier work [1]. The present model includes the following poisoningmechanisms: chemisorption, direct and knock-on reactive ion implantation,and redeposition of sputtered material on the target. This model [2] isreinforced with a more detailed input from a plasma model which accountsfor the changing target condition and the reactive gas content. This willresult in a time evolution of the bombarding reactive ion distribution.Combined with the SIMTRA package [3] and SRIM [4], this gives us a strongtool to investigate the time evolution and the mechanisms of the targetpoisoning.As feedback to the RSD model, the simulated time evolution is compared tothe experimental one for a planar DC magnetron. This will show thenecessity of including additional physical processes like diffusion, anaccurate model of existing aspects like implantation, or the correctness ofthe physical parameters defining the system.References:[1] K. Strijckmans et al., submitted for publication.[2] D. Depla et al., J. Appl. Phys. 107 (2010) 113307.[3] K. Van Aeken, et al., J. Phys D, Appl. Phys. 41 (2008) 205307.[4] The Stopping and Range of Ions in Matter, 2010, http://www.srim.org.Keywordsmodelingmagnetron sputteringplasmatime dependencyPowered by TCPDF (www.tcpdf.org)

Modeling the time dependency of the reactive sputter process

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Modeling the time dependency of the reactive sputter process

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Ghent University Academic Bibliography