Absil, P

Alloatti, L

Baets, Roel

Bogaerts, Wim

Dalton, LR

Elder, DL

Freude, W

Heni, W

Koeber, S

Koenig, S

Koos, C

Korn, D

Lepage, G

Leuthold, J

Palmer, R

Pantouvaki, M

Schindler, PC

Van Campenhout, J

Verheyen, P

Yu, H

English

Ghent University Academic Bibliography

High-Speed Silicon-Organic Hybrid (SOH) Modulator with 1.6 fJ/bit and 180 pm/V In-Device Nonlinearity R. Palmer1, S. Koeber1, W. Heni1, D. L. Elder2, D. Korn1, H. Yu3, L. Alloatti1, S. Koenig1,  P. C. Schindler1, W. Bogaerts3, M. Pantouvaki4, G. Lepage4, P. Verheyen4, J. Van Campenhout4,  P. Absil4, R. Baets3, L. R. Dalton2, W. Freude1, J. Leuthold1,5, C. Koos1 (1) Karlsruhe Institute of Technology (KIT), Institutes IPQ and IMT, 76131 Karlsruhe, Germany,  robert.palmer@kit.edu, christian.koos@kit.edu (2) University of Washington, Department of Chemistry, Seattle, WA 98195-1700, United States (3) Ghent University – IMEC, Photonics Research Group, Gent, Belgium  (4) IMEC vzw. Kapeldreef 75, Heverlee, Belgium  (5) Electromagnetic Fields & Microwave Electronics Laboratory (IFH), ETH-Zurich, Zurich, Switzerland  Abstract We report on a 40 Gbit/s silicon-organic hybrid (SOH) modulator with 11 dB extinction ratio. A novel electro-optic chromophore with record in-device nonlinearity of 180 pm/V leads to VL = 0.5 Vmm and a low energy consumption of 1.6 fJ/bit at 12.5 Gbit/s. Introduction Energy-efficient silicon electro-optic modulators are key components for future short-distance interconnects in data centers and high-performance computers [1]. Targeted energy consumptions are tens of fJ/bit for dense off-chip connections, and a few fJ/bit for global on-chip connections [1]. Over the last years, a variety of silicon modulators has been demon-strated based on free-carrier depletion, or injec-tion in pn-diodes, or based on metal-oxide-semiconductor (MOS) structures [2, 3]. Carrier injection devices have typically very small volt-age-length products of πV L  = 0.36 V mm [4], but the large carrier lifetime calls for pre-emphasis and limits the modulation speed to 20 GHz. The modulation energy per bit is usually in the pJ-range due to the forward bias of the diode. Carrier depletion modulators, in contrast, have been demonstrated to operate at data rates of up to 50 Gbit/s [5], but typically with πV L  > 10 Vmm for non-resonant devices. Ex-tinction ratios (ER) range from 3 dB to 8 dB at high data rates, and the lowest reported energy consumption is 200 fJ/bit [6]. Modulation ener-gies can be significantly reduced by using reso-nant structures, such as ring resonators, micro-disks or photonic crystal waveguides. The low-est energy consumption reported to date for a silicon-based modulator amounts to 3 fJ/bit and has been achieved with a microdisk modulator operated at a data rate of 12.5 Gbit/s with a drive voltage of 1 Vpp and an ER of 3.2 dB [7]. However, both carrier injection and depletion type modulators are subject to an inherent cou-pling of amplitude and phase modulation, and resonant structures suffer from strong wave-length dependence and temperature sensitivity. In this paper, we pursue a fundamentally dif-ferent approach by combining silicon slot wave-guides with electro-optic cladding materials in a non-resonant silicon-organic hybrid (SOH) de-vice. Pure phase modulation is achieved by exploiting the linear electro-optic effect in the cladding, where we reached an in-device mate-rial nonlinearity of r33 = (180±20) pm/V – the highest in-device value reported so far. For a 1 mm long device this leads to a -voltage of V = 0.5 V measured at DC. At 12.5 Gbit/s we demonstrate data transmission with record-low peak-to-peak drive voltages of 125 mVpp, corre-sponding to an energy consumption of 1.6 fJ/bit. This is, to the best of our knowledge, the lowest energy consumption reported so far for silicon-based MZI modulators, a value that compares well even with best-in-class resonant devices. We further show that our device can be operat-ed at symbol rates of at least 40 GBd, where an ER of better than 10 dB is achieved.  Silicon-Organic Hybrid Modulator The schematic of a phase modulator is depicted in Fig. 1(a). It consists of a slot waveguide elec-trically connected to a coplanar transmission line through 60 nm thick doped silicon strips. The voltage applied to the transmission line drops across the narrow slot, resulting in a high elec-tric field that strongly overlaps with the optical mode, Fig. 1(a). The waveguide is covered and the slot is filled with the electro-optic chromo-phore DLD164, see inset of Fig. 1(a). The clad-ding is applied to the chip by spin coating a solution of 8% DLD164 dissolved in 1,1,2-trichloroethane. The cladding refractive index is n = 1.83 at  = 1550 nm. Earlier approaches to SOH integration of  (2) -nonlinear molecules [8, 9] utilized a limited percentage of dipolar chromophore dopants in an inert polymeric host matrix. Here, in contrast, we do not use a poly-mer matrix. Instead, the monolithic chromophore bearing pendant coumarin side groups is ap-plied to the slot waveguide. These side groups both stabilize the glassy matrix and significantly enhance the poling efficiency [10]. Silicon waveguides are fabricated in IMEC by 193 nm deep-UV lithography on a 220 nm SOI wafer with a 2 µm thick buried oxide. The Mach-Zehnder interferometer (MZI) modulator, Fig. 1(c), consists of an MZI with two identical 1 mm long phase-modulators, Fig. 1(a). The two phase modulators are driven in push-pull opera-tion by a coplanar waveguide (CPW, ground-signal-ground, GSG) as depicted in Fig. 1(c). The CPW consists of 600 nm thick copper lanes linked to the silicon modulator by 900 nm thick tungsten vias. The metallization stack is locally opened  to expose the slot waveguide. Fig. 1(b) shows an SEM image of the fabricated phase modulator with its metal stack. We measure a slot width of 160 nm and a rail width of 210 nm. The electro-optic cladding is poled at elevated temperatures by applying a DC voltage across the ground electrodes. The voltage-length prod-uct of the MZI modulator was measured to be VL = 0.5 Vmm in the low-frequency limit. Tak-ing into account the measured waveguide di-mensions we calculate the corresponding in-device nonlinearity of the cladding to be r33 = (180±20) pm/V. The fiber-to-fiber loss is 16.5 dB. The on-chip loss is approximately 6 dB for maximum transmission of the modulator. On-Off Keying Experiments  A pseudorandom bit pattern generator (PPG) with a PRBS length of 231-1 drives the MZI modulator using a GSG picoprobe. A bias volt-age of 2 V is applied at the same GSG elec-trodes by using a bias-T. A 50  resistor termi-nates the CPW via a second picoprobe. Light from an external cavity laser (1550 nm, 5 dBm) is coupled to the silicon chip and modulated. The data signal is amplified and fed to a digital communications analyzer (DCA) and a bit-error ratio (BER) tester. A gate field of up to 250 V/µm is applied as depicted in Fig. 1(c) for increasing the conductivity of the thin silicon slabs [9]. Fig. 2 depicts NRZ OOK eye diagrams for data rates between 12.5 Gbit/s and 40 Gbit/s at a drive voltage of 950 mVpp. The ER exceeds 10 dB for all data rates. At 12.5 Gbit/s and 30 Gbit/s we measure Q²-factors of 22 dB and 19 dB, respectively, and the BER is below 11011. At 40 Gbit/s we measure a Q² of 15 dB and a BER of 1108. In a second experiment, we reduce the drive voltage of the modulator. Measured BER are depicted in Fig. 3(a) for data rates of 12.5 Gbit/s and 25 Gbit/s. The meas-ured BER stays below the hard-decision 2nd generation FEC threshold of BER = 2.3103 for drive voltages of 190 mVpp (7 fJ/bit) and 150 mVpp (9 fJ/bit) for 25 Gbit/s and 12.5 Gbit/s, respectively, when the modulator CPW is termi-nated. Due to the short 1 mm length, the device can also be operated without termination (“lumped”) at a data rate of 12.5 Gbit/s. Next, we estimate the energy consumption of the modulator. As common in the field, we do this by calculating the dissipated RF power. Therefore, power consumption of laser, optical amplifier and electrical drivers is not included in these numbers. The estimated energy consump-  Fig. 1: (a) Schematic and simulated optical mode of a phase-modulator with chemical structure of the nonlinear chromophore. The two rails of a silicon slot waveguide are electrically connected to metal electrodes by 60 nm high n-doped (As, 4x1017cm-3) silicon slabs. The modulation voltage drops over the narrow slot resulting in a high modulation field that has a strong overlap with the optical mode. The novel highly nonlinear chromophore DLD164 is used as an electro-optic cladding material. (b) SEM image of a fabricated phase modulator. Copper electrodes are connected to the slot waveguide by tungsten vias. (c) Schematic of the MZI modulator. The device is driven in push-pull by a coplanar transmission line (ground-signal-ground). A gate voltage is applied at the silicon substrate to increase the conductivity of the silicon slab region [9].  Fig. 2 NRZ OOK eye diagrams at 12.5 Gbit/s, 30 Gbit/s and 40 Gbit/s measured at quadrature. Q²-factors, extinction ratios (ER)and bit error ratios (BER) are denoted in the figure. Drive voltage 950 mVpp. The ER exceeds 10 dB up to 40 Gbit/s. No biterrors are measured at 12.5 Gbit/s and 30 Gbit/s. At 40 Gbit/s we measure a BER of 110-8. PRBS length 231-1. tion for various transmission experiments and for different peak-to-peak drive voltages Vdrive is plotted in Fig. 3(b). The values have been de-rived as follows. For the 50 -terminated device, and assuming an ideally rectangular NRZ drive voltage, the energy Wbit per bit is estimated by dividing the electrical input power by the data rate r, bit drive2( / 2) 50 //W V r=  . For the un-terminated device, we estimate the power dissi-pation associated with (dis-)charging the total capacitance modC  of the modulator as seen by the CPW to be ´= 2modbi vet dri / 4C VW  [1]. Crucial parameters are the drive voltage and the modu-lator capacitance. For the terminated device, Vdrive is measured with a 50 -terminated scope before connecting the RF-cable to the Picoprobe. For the unterminated device, Vdrive must be inferred. To this end, the frequency-dependent input impedance Zin is measured with a vector network analyzer (VNA). With the measured open-circuit generator voltage 2Vscope, the frequency dependent voltage Vdrive can then be calculated. For finding the average of  2driveV f , we weigh with a    22sin π πf r f r  function (assuming rectangularly-shaped pulses) and integrate over the relevant frequency range. From this we calculate the mean voltage drive scope1.8·VV = . Furthermore we extract the modulator capacitance from Zin(f) and find mod 2 (40 fF0 20)C C = =  in good agreement with values predicted by an electrostatic simula-tion (CST). Furthermore we check the capacity by measuring devices of different length (250 µm to 1.5 mm) and confirm a linear relation between length and modC . Currents flowing due to bias and gate voltag-es are measured to be below 2 nA and below 100 fA, respectively, contributing a negligible energy consumption of less than 1 aJ/bit. For a drive voltage such that we remain below the FEC-threshold in Fig. 3(a), the lowest energy-per-bit value is (1.6 0.1) fJ/bit . This is ob-tained for an unterminated modulator operated at a mean drive voltage of 125 mVpp (Vscope = 70 mVpp) at a data rate of 12.5 Gbit/s. At 80 mVpp drive voltage, a BER of 2.7103 is measured, still very near the hard-decision (and certainly below the soft-decision) FEC threshold with an energy consumption of only 0.6 fJ/bit. These are the lowest values reported so far for nonresonant silicon modulators, comparing well with the energy required by resonant structures.  Conclusions We experimentally demonstrate a high-speed silicon-organic push-pull MZI modulator with a very low energy consumption of 1.6 fJ/bit. The device is successfully operated at data rates up to 40 Gbit/s. Drive voltages can be as low as 125 mVpp due to hybridization of a silicon slot waveguide and a novel highly nonlinear organic chromophore that has an in-device nonlinearity of = 33 (180 20) pm/Vr  after poling. Acknowledgements We acknowledge support by the DFG Center for Functional Nanostructures (CFN), the Karlsruhe International Research School on Teratronics (HIRST), the Karlsruhe School of Optics and Photonics (KSOP), the Initiative and Networking Fund of the Helmholtz Association, the DFG Major Research Instrumentation Programme, the Alfried Krupp von Bohlen und Halbach Foundation, the EU-FP7 projects SOFI, OTONES, PHOXTROT and by the BMBF joint project MISTRAL, the European Research Council (Starting Grant ‘EnTeraPIC’, no. 280145), the National Science Foundation (DMR-0905686, DMR-0120967) and the Air Force Office of Scientific Research (FA9550-09-1-0682), the Karlsruhe Nano-Micro Facility (KNMF), the Light Technology Institute (KIT-LTI) and ePIXfab (silicon photonics platform). We are grateful to P. Brenner (KIT-CFN) for support in nano-inspection and analysis and to P. Pahl (KIT-IHE) for support in RF-analysis. References [1] D. A. B. Miller, Opt. Express, 20(S2), 2012. [2] G. T. Reed, et al., Nature Photon., 4:518–526, 2010. [3] J. Fujikata, et al., OFC 2010, paper OMI3. [4] W. M. Green, et al., Opt. Express, 15(25):17106–17113, 2007. [5] D.J. Thomson, et al., Photon. Technol. Lett., 24(4):234–236, 2012. [6] T. Baehr-Jones, et al., Opt. Express, 20(11):12014–12020, 2012. [7] M. R. Watts, et al., Opt. Express, 19(22):21989–22003, 2011. [8] R. Ding, et al., J. Lightwave Technol., 29(8):1112–1117, 2011. [9] L. Alloatti, et al., Opt. Express, 19(12):11841–11851, 2011. [10] S. J. Benight, et al. J Phys. Chem. B, 114(37):11949–11956, 2010.   Fig. 3 Eye diagram and energy consumption of the modula-tor when operated at low drive voltages. (a) Measured BER as a function of drive voltage for data rates of 12.5 Gbit/s and 25 Gbit/s when the DUT is terminated by a 50  probe (green, magenta) and for a rate of 12.5 Gbit/s for an unter-minated device. Data points in the gray colored area were measured at quadrature. (b) Corresponding energy per bit for the various drive voltages of (a). (c) Optical eye diagram at 12.5 Gbit/s for an unterminated device at quadrature; Vdrive = 320 mVpp, Wbit=10 fJ. (d) Optical eye diagram at 12.5 Gbit/s for an unterminated device below quadrature; Vdrive = 125 mVpp, Wbit=1.6 fJ.  

High-speed silicon-organic hybrid (SOH) modulator with 1,6 fJ/bit and 180 pm/V in-device nonlinearity

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High-speed silicon-organic hybrid (SOH) modulator with 1,6 fJ/bit and 180 pm/V in-device nonlinearity

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