'Institute of Electrical and Electronics Engineers (IEEE)'
Abstract
Wide bandgap (WBG) devices have emerged as an alternative solution to silicon-based devices in many applications, considering the possible design and construction of converters with lower power losses, higher power density, and the ability to operate on high switching frequency. However, straightforward drop-in-replacement of the devices cannot provide the optimum desired performance. A simulation platform is essential for optimal design and system development. This paper presents the study of the development platform for a GaN-based three-phase 2-level voltage source inverter (VSI) system and analysis considering switching frequency and dead time. A modelling platform utilizing GaN enhancement mode power transistor EPC2016 was developed for the 3-phase VSI system. GaN-based 3-phase VSI system was analyzed for 60 V DC input using the modeling platform at different switching frequencies (50 kHz, 75 kHz, 100 kHz, 125 kHz) under deadtime conditions of 70 ns, 50 ns and 30 ns. Additionally, the system is investigated for the sinusoidal PWM (SPWM) and space vector PWM (SVPWM) techniques for all the cases.journal articl
