Electron device modelling requires accurate
descriptions of parasitic passive structures connecting the
intrinsic electron device to the external world. In
conventional approaches, the parasitic phenomena are
described by a network of lumped elements. As an
alternative, a distributed description can be conveniently
adopted. This choice has been proved very appropriate when
dealing with device scaling and very high operating
frequencies.
In this paper, a distributed parasitic network is adopted in
association with a nonlinear electron device model. In
particular, it is shown how an equivalent intrinsic device and
a suitably-defined distributed parasitic network can be
accurately defined and modelled on the basis of standard
measurements and easy electromagnetic simulations.
Wide experimental validation based on GaAs and InP
PHEMTs will be provided, showing accurate prediction
capabilities both under small- and large signal conditions.
The proposed model is shown to perform optimally even
after periphery scaling