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Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers
Authors
Gaspare Alessandra Di
Lanzieri Claudio
+10 more
Coquillat Dominique
Evangelisti Florestanto
Valeria Giliberti
Ennio Giovine
Dispenza Massimiliano
Michele Ortolani
Calarco Raffaella
Casini Roberto
Sadofev Sergey
Knap Wojciech
Publication date
1 January 2013
Publisher
'SPIE-Intl Soc Optical Eng'
Doi
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Abstract
We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization- sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers. © 2013 Copyright SPIE
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info:doi/10.1117%2F12.2004087
Last time updated on 22/07/2021
Archivio della ricerca- Università di Roma La Sapienza
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Last time updated on 12/11/2016