research article

Opto-electronic properties of ZnSSe films for liquid crystal light valve

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Publication date
1 January 2002
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Abstract

用分子束外延法(MBE),在銦錫氧化物(ITO)導電玻璃襯底上生長了ZnSSe薄膜,詳細研究了薄膜的光電特性。通過控制反應時的生長參數,制備出了符合紫外液晶光閥設計要求的光導層薄膜。室溫下,該薄膜光譜響應截止邊的響應度為0.01A/W,紫外/可見光響應對比度大于103。薄膜的暗電阻率隨薄膜晶粒增大而減小,在襯底溫度為2900C時,所獲得的ZnSSe薄膜具有4.3×1011Ω·cm的暗電阻率。頻率從40Hz到4000Hz的交流特性測試,也證實該薄膜符合器件紫外成像的工作要求

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