Bruns J.

Ellmer K.

Klaer J.

Salzmann C.

A new plasma technique is presented for the sulphurization of CuInS2 absorber layers for thin film solar cells. Using an RF excited magnetron sputtering plasma it is possible to perform a treatment in an Ar H2S atmosphere without any deposition from the target  Cu or Cd . Using this technique, Cu In bilayers with a Cu to In ratio of 1.2 were sulphurized at temperatures between 350 and 500 degrees C for 15 to 240 min. The dependence of the structural and electronic parameters of the prepared CuInS2 films, which were found to be roquesite, is reported. The films display a  112  texture and are very porous compared to cells sulphurized conventionally in elemental sulphur vapour. From such absorber layers solar cells have been prepared. With the best cell a solar conversion efficiency of 6.2   under simulated AM1.5 illumination could be achieved. These promising results open the way for a process based only on sputtering magnetrons for the preparation of CuInS2 solar cell

Ellmer, K.

Salzmann, C.

Bruns, J.

Klaer, J.

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Formation of polycrystalline CuInS2 films by plasma sulphurization of Cu In bilayers in a magnetron discharge in an Ar H2S atmosphere

Formation of polycrystalline CuInS2 films by plasma sulphurization of Cu In bilayers in a magnetron discharge in  an Ar H2S atmosphere

Formation of polycrystalline CuInS2 films by plasma sulphurization of Cu In bilayers in a magnetron discharge in an Ar H2S atmosphere

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