Physics Low-Dimensional:VSV Company, Box 11, Moscow 105523 Russia V S V CO. LTD, BOX 11, MOSCOW, RUSSIA, 105523
Abstract
The initial stages of cobalt disilicide formation on Si(111) and Si(100)surfaces are studied using backscattered electron imaging of the near-surface atomicstructure. Both the reactive deposition and the solid phase epitaxy are investigatedin the coverage range of 1-10 ML of Co. The evidence for CoSi2 island formation atthe earliest stages of the process is found. The epitaxial orientations of disilicidelayers grown on Si(111) and Si(100) surfaces are determined
