In this contribution we investigate in time domain pre-breakdown current fluctuations during the device degradation between Vcrit ( 48 -50V for -2V/2min step-stress) and the breakdown voltage (Vbd 48 80V), as well as post-stress random telegraph signal (RTS) noise in Al0.24Ga0.76N(25nm)/GaN(40nm UID + 3\u3bcm C-doped)/SiC HEMTs from FBH
