We have characterized, at 500 and 540-degrees-C, an open-tube method for zinc diffusion into InP. The junction depth accurately fits the data from sealed ampoule experiments over the relevant range of zinc molar fractions of the diffusion source. Strong electric passivation phenomena were detected in as-diffused samples; phosphorus doping was restored (N(a) - N(d) > 10(18) cm-3) after short annealing runs at a temperature of around 400-degrees-C
