The application of two novel metalorganic complexes, namely the isostructural tris(N,N\u2019-
diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N\u2019-diisopropyl-2-dimethlyamido-
guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition
(MOCVD) of Gd2O3 and Dy2O3 is discussed. On the basis of the detailed thermal gravimetric
analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver
continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors
was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were
carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in
the range 300-700 \ub0C. Uniform films with reproducible quality were deposited on Si(100) and
Al2O3(0001) substrates over the entire temperature range. Employing a multitechnique approach
(XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C-V), variations of the growth characteristics and
film properties with deposition temperature are studied in terms of crystallinity, structure, surface
roughness, composition, and electrical properties