The ferroelectric material Strontium bismuth titanate (SrBi4Ti4O15) and also the Ba doped SBT (Sr1-xBax Bi4Ti4O15) was synthesized taking different concentration of Ba (x=0.04 and 0.1) by solid state reaction method. The synthesized ceramics were then characterized with different characterization techniques. From XRD pattern the phase formation of the specimen was confirmed, SEM images showed the plate shaped grains and also the grain size increases with the increase in the concentration of the Ba content. P-E Loop confirms the ferroelectric property of the ceramic, the remnant polarization of the material decreases with the increase in the Ba content. From the UV-Vis Spectroscopy it was observed that the band gap energy of the material decreases with an increase in the concentration of the Ba content showing semiconducting behaviour and from the dielectric study it was observed that the dielectric constant of SBT at room temperature is 190. The transition temperature is above 500OC that is nearly 520OC. Also the dielectric loss was found to low and it decreases with an increase in the Ba content
