New layer-by-layer photonic crystals were fabricated using standard semiconductor micromachining techniques. Because resistivity of a silicon wafer decreases with the doping concentration, the authors predicted that due to the low resistivity of layers, this structure will show metallic photonic crystal properties, exhibiting a metallicity gap with an upper band edge around 100 GHz, with the new dimensions

B. Temelkuran

E. Ozbay

G. Tuttle

J.P. Kavanaugh

M. Bayindir

M.M. Sigalas

Summary form only given. Photonic crystals are periodic structures with the property of reflecting the electromagnetic (EM) waves in all directions within a certain frequency range. These structures can be used to control and manipulate the behaviour of EM waves. Although earlier work concentrated on building these crystals with dielectric materials, there are certain advantages of introducing metals to photonic crystals. First, metals offer a high rejection rate when compared to the dielectric crystals. Second, for microwave applications, the dimensions of metallic crystals can be kept much smaller than the minimum dimensions needed for a typical dielectric crystal. In the paper, we propose a method for the fabrication of layer-by-layer metallic photonic crystals. A similar method had been used by Ozbay et al. to fabricate dielectric photonic crystals using silicon wafers. We fabricated a new layer-by-layer photonic crystal using highly doped silicon wafers

Temelkuran, B.

Bayındır, Mehmet

Özbay, Ekmel

Kavanaugh, J. P.

Sigalas, M. M.

Tuttle, G.

Bilkent University Institutional Repository

suliiiiicrti-.iiirtric SiO-2. splicrcs," Appl. Phys. 1,eLt. 71, I148 (1997). 0. kiliiiiiia, I:. Kiiiii;ichcv,i, "A core-shcll ; ippri idi  111 producinj: In p i i l y i i i e r  1x1110- c~ imponen ts , "  Macrnn i~ i l ccu les  32, 4122 (1999). 6 .  CTUB2 2:45 pm Optical properties of ordered macroporous materials made by colloidal assembly 1. Tliniiic, 0.). Pine, (;. Sulirainani;~ii,~ ieniiml Cngiiiro-iirg lkpurti~ieiii, Uwiversify Cd(tiriii~i, S n i i l o  Fkirl~(ir(i, USA; I - w i d  iiioriirci"engiiie~i i ig. tIcslI.cdzI 7'hevc is currciitly ii iifiijiir iiitrrcst iii t h e  design ancl Lihrication of pcriiidic dielectric striic- titres exhibiting p l i i i t i i ~ i i c  I~anclgaps (PIK;) I i i ~  opticnl aiid nci i r - i i i f~rcd ficquciiiics. Apart f rom tliciv a > ilic~itiiiiis i n  Lakilysis aod scpara- , P U G  rnatcrials also havc se!,- ere1 unique opticd priipcrtics, such iis inhibi- tion iif s p ~ i i i t a n e i i u s  cmissioii ( I F  pl i~ i t i i i i  Iiicalifiitiim ,', kint requirement [iir ;icliieviiig i i l iscrvali lc hanilgaps is thal the iiiatcriiils b e  constru~Lcd fro111 makrials with high diclcclric iniitrCist. Ihc rangc of wwelengtlis iif t h e  PUG is dctcr- iiiiiicd by tlic pe i  iodiiiiy iif tlie iwids. lliits, to acliicvc a PIK; in t he  visihle, lattice spacings should scale witli the wivclcugth o f  visible light. A promising approach L o  makii a t  optical frequencies is to use colloid ;issemblcd tcmp1;itcs. Miinodispcr\e sell-asscnible illto thrcc-diiiicnsi[inal crystals with excellen( Icing-rangc order at optical Iciigth sides. 'L'lic ordered arrays can tlicii ac t  as a scafhlold :iroiiiiii which a high diclcciric material can bc syiitlicsizcd. \'e havc used this iden tii makc p c r i ~ l i c  miiLropiirous materials iisiiig a siiiiplr iiiiil ef- fcclive m e L h o d . '  Our tecliiiiqu moiiiidispersc polystyrene as tcmpl trafine (CC 100 i r m )  mckil oxiclc p;irtiiles as tlic surrouriding high dielectric iixitcrial. 'l'lic pro- cess invcilvcs slowly drying a iiioiii)dispcssc piilpstyrcnc dispersion with a colloidal dispcr- s i r i n  of the desi red oxide. As t h e  mixture is drying, tlie pdyatyreoe spl ierca orgiiiize them- selves in an  orilcrcil lotticc ;iiid t h e  oxide par- ticles pack into the voids l ielwccii the spheres. Subsequent removal ofthe piilystyrcnc by lie.it trcatiiient leads ti) ail orclerecl ~ i i ; i ~ r t i p n r i i ~ i s  material with ilie nxide particles f o r o l i q  the silicon dioxidc iiiid titaiiium dioxidc with this nietliod. L:igurc 1 s l i i ~ i v s  ii scxioing clrctron niicroscope (SliM) inicrograph r ~ f  11111cr0- piiioiis titniiiuni dioxidc. Optically, these materials cxliiliit ii stroiil: iridcsceiicc i n  rcllcctcd light. OptiLal rrflcctiv- ity incasureiiiciiLc wcrc iiie3siired to priibc the  existence of I ) a n i l  gips iii t h e  inaterial, 'The rcilectivity spcitrzi of n i ~ r o p i i r i i i i s  iitaniiim diiixide is shown in Vig. 2. 'l'hr p c d w  iii rcilcc- tivicy correspond to Iliagj: rctlcctions from tire iirdcrcd porous slructiire, T h e  full width at lialf maxiiiiuni or tlicse peaks lie bctwecii 12 atid 14% ;uid is related Lo tlic strength i i f  tlic . I  w;llls (lfthc porcs. Wc heve m;1dc macri,~"lro"s CTuB3 3:OO pm Highly doped silicon micromachined photonic crystals TUESDAY AFTERNOON / CLEO 2000 / 183 c'LhB3 Fig. L. Silicmalics afthe silicon iiiicl,imachinii,~ steps. I'liot~iiiic ciystals arc periiiilic structures with t h e  iirnperly of rcllcctiiig llic eleitromagnctic (IiM) wiivcs iii all directions within a certain tn c~ i i t rn l  aud m;inipnl;itc the Iiclxiviour I I ~  hltlioiigli e d i e r  work coiiceii- tralcd on boildiiig these cryatals with dielectric matcri;ils, thcrc arc ccrt'iiii ;idvaiikiges iil i i i -  triiducilig met i l l s  ti1 photonic Iiickils iilier B high rejectinn I piirctl ti1 the dic1cLtric Lrystds. crmvxvc applical ioiis, LIE dimci~siiiils of I W  t;illic crystals ciin he  l q t  iiiuch sma l le r  than t h e  iniiiimum climciiskiiis iiccdcd for a typical dielcclric crystal. In  this paper, w e  will prnpnse a I n e t h i i d  for the  ialiricatinii nf laycr-hy-layer metallic pliiitoiiic crystals. A similar m e t l i o d  Ixid hcen used b y  OAxiy et (11, LO habricatc dielectric photonic i rystals iisiiig silicou wii- fcers.' tonic Lrystal riaiug highly i h i p e d  silicon wilcrs. Ilcc.iue rcsistivity of ii silicon waicr dccrc:iscs with t he  diipiiii; cnniciitratiiiii, we predicted that dnc tu (ti? low resistivity of layers, this striictiirc will show iiictallic phnliinic crystal priipcr~ies, cxliibitiug a rnet;illicity gap with ao upper Iiiiiid edge miiiiiil 100 (;lIz, with t l ic new iliiiiciisiiiiis. We iisc the  a i i is~i t ropi~ ctcli- iiig iif silicon by aqiicoiis p i i t a s s i i i i n  hydroxide (KOII) ,  wliicli clches tlic 100 pkines, and the planes making 45" tu  tlic I10 p lanes oTsilicon ;it e q i d  rates, iuid resulting iii flat walls at the ctclicd pcrpciidicolw curlaccs. I The (100) silicon walcrs used in  this work were c;ich 3 in. i i i  dialneter and 400-Iun Ihick. ' Ihc  icsistivity cif wafers werc in tlic Iange 0.001 5- 0.004 blcm. 111 the Grst step nf the pro- cess, o n e  sick o l  the wafcrs arr coated with ii nitrate filiii or  tliidmc9s I pin, at 2.50"(: rising rrequ~ncy r;~ngc. ulc.;e stl lli tllrcs cill ilc LIscci We f,llJriiatc<l '1 ne1v laycr-l>y-l;lycr pll<l- Sidc vicw Ibli vicw Sidc vicw '1'op view 184 / CLEO 2000 / TUESDAY AFTERNOON Frequency (GHz) CTlIR3 Fig. 2. Schciiiiitics (left pancl) alii1 t l ic (11) fct layer-liy-layer plirrtonic clystals. .- U) U) 15 simulation - cxperiment e b Frequency (GHz) rod removed g 0.m 2 0.02 .- E I- Frequency (GHz) CTuH3 Fig. 3. (01 Measured (solid line) ;nid simnlatcil (dotted line) traiisniission cl iari ictcr is- tics o l  a Sour layer S L  type crystal strocture. (I,) .rr , ' .  ' uimiissioii characteristics of pima ddcct (solid line) and single rod removed defect (dotted line) built arouiid Ict rypc pliolonic cryst;il. plasma enhanced c h c n k i l  vapour cleposition (I'HCVD). Nitrate film must serve as a mask during the ;inisotropic etching step, and  wc foiincl ont that this thickness and growth t e n -  per;iturc was suitable lor this purpose, Next, the nitrate was patterned Iiy convenlional plio- tolithogrepliy and  ; iquenus hyclriifloric ;icid ( I F )  etching (Fig. I (a)I. 'l'lie pattcrn cnnsists of I9 parallel stripes, each 9 6 0 - p i  wide and wdh ceiitcr-to-center separation of 1600 1~1ii. Ihesc stripe dimelisions and tlrc wafer thick- ness determine thc upper liand-cdge, calcii- lated to be a r o i d  100 (41 1%. The stripes arc at ananglcof45"to tlic Il0plaiieoitliesilicoii,as defined by the major flat ol the wafer. A 1.5- en-wide border around the stripe-array is priitcclcd by the phiitorcsist, with the initer regions OS the wafer left exposed s n  that a sqiiarc will be k i t  alter etching. Within tlic Frequency (GHz) traiismission cliawctciislics (tight pancl) of ( a )  st aoil border region xc foul- s m a l l  rcLtal1glllar npc!i- iiigs that will scrvc :is guide liolcs for the st,ick- iiig process. Alter tlie nitrate layer is patterned [Fig. l(li)], i n  order to protect I>acksidcs iiftlic wafers, we cover the most i i u te r  piirts of each saniples back side, ;and stick it tn a smnotli surkice which was not etched by KO1 1 solu- tion. In  order Lo Save space and time, w e  prcScr to stick it back-to-back with another ready-to- c lch  sample [Fig, I (c) I. 'The wafers are i l i c n  dipped iotn tin ; iqnei ias KO11 solution. A t p p -  cal etch pcrlormcd iii ii 25% KO11 solution a t  a tcmpcrature of 55°C; (below t l i e  nieltii ig tciii- pcratLive 1if wx) takes ;iboiit 24 Iioiirs to  etch entirely through the wafer. Utle to t h e  etching profile of silicon with ROH, the rods arc also ctched -400 1p.m from Ii i i t l i  sides, which is tliickness OS the wales. So, rods bcci i i i ie ap-  proxiniately 960 - ( 2  X 400) = 160 pi1 wide a l  the end of the etching. Al l  layers arc fiirther etclicd tlie ncccssiiry time to equalize rod thicknesses to I50 pin. 1 Iiiovcd by trichloroetliai~ maining nitrate is vci i io wafers arc slaclced to Sorm photonic crystal using a Iiolder having pins tliat align to the guide Iiolcs. Once fiibrication was ciimplctcd, tr'insniis- sioii properties of the crystal were incasnrcd with a W-liand (75-120 GIiz) mcasurcmcnt arrangcnient. A Kii-Iiaiiil Sreqiiency syntlie- sixer was used to gencrn~c tlic signal that was Sirst amplified and then iiiultiplicd in  ire- qiicncy by six times to rc"Ai the  \V band. 'l'lic high frcqiicncy signal was rat1i;iteil Iiy ii standard-gain hnrn antci ina (aperture s i x  o l  I, I7  c n i  X 1.45 cm), ai id the transmitted ra- diation was cokcted by a second lwrn all- tcnna. l'lic ;implitudc ( I f  the received signal was measured using a hamionic iiiixcr and a network ;i~xilyxv. As shown i n  Pig. 2 (MI pancl), t h e  wafers niay be stacked ti) Siirin simple tetr;igonal (SI)  o r  Sacc centered tetragonal (fct) type of crys- ' 'The transmission spectra iif eacli crystal as the n i in i l ie r  ollaycrs are increased arc cxhili- ited on righl 11anc1. The iippcr edge of the bandgap Siir st crystal is locntcd at 10.5 GI lz, band edge is iletcctccl within the measurable lreqociicy range, consistent with (lie theory ilia1 predictcd ii handgap extending i l i iw i i  to x r i )  frequencies. This mctallicity gap verifies the prediction that our crystals arc analogous to mctallic photonic crystals. 1 Ariiund 80 GHz, tlic attenuation per layer is aroiiiid 3.5-4 dl< h r  SI structure, and is 5.5-6 dn Tor k t  struc- LIII'C. Within t he  metallicity gap oibiith ( 1 1  tlic crystds, we nbservc hI1 rcilectiiin t i l  the HM wave. L'igurc 3(a) shows the traiismission from 4 layer st  type o i  crystal (solid line), which tigrees wcll with the transier matrix methiid siinulatiiiii results (dotted liiic). It w a s  previously shown in other iiictallic layer-hy-layer pliiilonic crgsk i ls  that dcrcct struetiires around this geometry can be built by iiieiiiis oS;idiling nr removing rods from XI otherwise perlcct  crystal.^ 'L'hc sanic idea was uscd to  investigate the M c c t  clmxtcristics 01. these scmicnnduclor Iiascd phiitonic crystals. The defect modes fo r  this wiictiirc show factors arouiid 30. l:igiire 3(b) (dotted liiic) sh~iws t h e  tr,iiisniissiiin illrough a 9 layer i c t  type of crystal, with a single rod missing i ~ ~ i ~ ~ ~  the 5'" layer nt' t l ic  crystal. ' ~ I i c ~  r e s o ~ i ~ n c c  fre- quency of the M c c t  mode is at 9 I .8 (Xlz,  with W e  then investigated a planar type ofdcfect sttuctures, built around 'in 8 layer si based photonic crystal. l l i e  pkinar defect wiis ob- tained b y  separating t h e ~ ~ ~ ' i i i i d   layers ofthc crystal. This rcsulted in  a planar air gap I ie-  Lwccn the Livu pliiitonic mirrors, e;icll formed oi'a 4 layer (2 unit cell) crystal. 'These plaiiiv defects d s o  resulted in similar defect charac- teristics, linwever with higher translnissiiin amplitudes. 1:igure 3(b) (solid line) sliows traiismission ~I i ro i igh tlic planar defect iif scptiration width L ~~ 650 yin. ' l ' l i c  defecl ire- quency, which is X3.2 (;Hz lor this case, can be tiiiicd witliiii tlic Iiand gap hy changing the width o l  tlic Lavity a s  we linvc iiivcatigatcd in tlie previiius dielectric and mctallic yliotiinic cryst.il struckires In conclusion, using stand;ird scmicoi~duc- tnr microm;icliiiiiiig techniques, we laliric;ited a i i cw  layer-liy-layer pliotoiiic crystals. 'l'liesc crystals exhibited a mcidlicitypap with an u p  per I iand  edge iiroiiiiil ion GiIz. 'The rejection rate per layer nlitaincil frnm Sct type of crystals (5.5-6 ill<) wcrc Sound IO l i e  superior to rejec- Lim rates of similar iliclcctric photonic crystiil structures (3..5-4 ~11% per layer). 1,oc;iliz:itiiin ol the EM lickl is pimilblc with defects crcatecl around tliesc structures by i.emoviiig riids or intriiducilig planar cavities. H y  using specid silicon thinning ~nctlinds and doiiblc etching ~ u i g c  n l  this fiiliricatinn tecliniilogy could priibahly be extendcd to  built structiircs with pliotiinic bandgaps as high as 10 THz. 'lawn S/fllt' Univ., USA I. ilc~ for ict clystai ~ l ~ l l l l n ~  iz  C;IT~.  N~ iowcl a Q fictl lr  or 30. the wafers Ill1 lllltll surr.rces, i lK  Srct~ucncy U. 'l'einclkuran, 11. Altug, U. Ozliay, "Ex- perimental iiivcstigation nf layer-by-layer mct;illic pliolonic crystds," IEl: L'roc: Optoeleclvon. 145, 409-414 (1998). 11,. Ozbay, E. Miclicl, (;. ?'tittle, I<. Iiiswas, M.M. Sigalas, K . A L  Ho, "Micri~iiiacliiiieil niilliiiicter-wave photonic bandgap crys- 2. TUESDAY AFTERNOON / CLEO 2000 / 185 CTuB5 3:30 pm 

Highly doped silicon micromachined photonic crystals

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Highly doped silicon micromachined photonic crystals

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