1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector

Authors
Publication date
1 January 2000
Publisher
IEEE, Piscataway, NJ, United States

Abstract

GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect

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