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1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Authors
Kimukin Ibrahim, Ozbay Ekmel, Tuttle Gary Biyikli Necmi
Publication date
1 January 2000
Publisher
IEEE, Piscataway, NJ, United States
Abstract
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect
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Last time updated on 12/11/2016