Bouysse, Philippe

Disserand, Anthony

Jardel, Olivier

Lapierre, Luc

Martin, Audrey

Quéré, Raymond

HAL-UNILIM

            In the frame of Technical CNES’s Skills communities, the CCT “Embedded Energy” with the participation of Airbus Defence & Space, CCT’s ”Atmospheric and Space environment” and "Microsystems and Electronic Components”, will organize a seminar on : Wide gap power components in energy conversion 27/28 April 2016 at ENAC Toulouse (Amphitheater Costes) PROGRAM :  Wednesday (27 April 2016) 9h30-9h35 Welcome and introduction C. Rouzies CNES 9h35-9h50 Presentation of  CCT ENV, MCE and EdB E. Gloaguen and all CNES 9h50-10h20 Cnes and power electronics C. Rouziès CNES 10h20-10h50 Overview on SiC and GaN transistors in modern power electronics for More Electrical Aircraft applications B. Cogo IRT 10h50-11h20 Break   11h20-11h50 Airbus Defence & Space EEE supply chain view on GaN & SiC components K. Hirche Airbus DS 11h50-12h20 Issue and challenges of AIN buffer layer on silicon for Gan based power electronics F. Semond CRHEA / CNRS 12h20-13h30 Lunch   13h30-14h00 Gan From Exagan targeting multiple application segment E. Moreau Exagan 14h00-14h30 E2V’s High Power GaN Systems Mosfets dedicated to Space market  I. Tsikouris-Willgers E2V  14h30-15h00 Intersil’s Status of GaN for Space C. Boucheron/ O. Mansilla  Intersil 15h00-15h15 E2CoGan Progress Status, by Airbus Group Innovation O. Crepel / C. Weulersse Airbus Group Innovations  15h10-15h40 Break   2 15h40-16h10 Envelope Tracking Based on VHF Power switching C. Delepaut ESA / ESTEC 16h10-16h40 DC/DC converters in normally-ON GaN HEMT technology for the design of RF Power Amplifiers in MMIC technology R. Quéré X-LIM / CNRS 16h40-17h00 Start walking to the LAAS laboratory   17h00 Visit of LAAS cleanroom (https://www.laas.fr/public/en/micro-and-nanotechnologies-platform) LAAS researchers LAAS   Thursday (28 April 2016) 9h00-9h30  Radiation Effects on components at space level R. Ecoffet CNES 9h30-10h00 Modelling Radiation effects on Normally-Off GaN Transistors M. Zerarka IRT 10h00-10h30 Radiation status on SiC Power Schottky Diodes for Space application G. Salvaterra Airbus DS 10h30-11h00 Break   11h00-11h30 How approach a heavy ions test on a new device technology using SiC power devices as an example F. Tilhac Hirex Engineering 11h30-12h10 A Multistress reliability model applied to Normally-Off GaN Switch Power Transistors A. Bensoussan / F. Tilhac IRT / Hirex Engineering 12h10-12h40 CEA Tech power GaN-on-Si landscape : Supporting the development and industrialization of disruptive power devices M. Gavelle CEA-Tech 12h40-14h00 Lunch   14h00-14h30 Gate drivers for wide bandgap power transistors N. Rouger LAPLACE/ G2ELAB 14h30-15h10 GaN FET, the new ally of Power Electronics JM. Mollard / W. Serrano Airbus DS 15h10-15h40 Gan transistor for space équipments - From selection to application M. Fossion / P. Maynadier TAS-B / TAS-F 15h40-16h00 Last exchanges taking a coffee    

DC/DC converters in normally-ON GaN HEMT technology for the design of RF Power Amplifiers in MMIC technology

http://cct.cnes.fr/content/cct-edb-20160427-les-composants-de-puissance-%C3%A0-grand-gap-pour-la-conversion-d%C3%A9nergie#anglais

DC/DC converters in normally-ON GaN HEMT technology for the design of RF Power Amplifiers in MMIC technology

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