Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN

Abstract

International audienceIn this work we carry out characterization of GaN implanted with Tm and Eu ions by scanning and transmission electron microscopy. Structural investigation is supported by optical measurements. We have investigated samples implanted at room temperature with different energies (150–300 keV) and fluences (1–7 × 1015 at/cm2). High temperature annealing was performed at 1200 °C and 1300 °C with the GaN surface protected by a 10nm thick AlN cap grown by MOCVD prior to the implantation. Direct implantation in GaN, results in the formation of a high density of stacking faults in the damaged surface layer and a nanocrystalline surface layer when a critical dose is exceeded. Implanting through the AlN capping layer prevents the formation of the nanocrystalline layer even for high fluences but the stacking faults are still generated. The AlN cap also protects the surface during high temperature annealing