Negative Capacitance for Stabilizing the Logic State in a Tunnel Field-Effect Transistor

Abstract

Ferroelectric negative capacitance field-effect transistors, or FE-NCFETs, are promising device architectures for achieving improved performance in terms of hysteresis, on–off ratio, and power consumption. The study investigates the influence of negative capacitance (NC) on the transfer characteristics of van der Waals field-effect transistors below and above a critical voltage (Vth) on the heterophase of the CuInP2S6 (CIPS) gate ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelectric phases plays a crucial role in stabilizing n-channel conductance by dual gate modulation. This results in the emergence of a nonvolatile logic state between the two binary states typical of conventional tunnel field-effect transistors (TFETs). Concerned study proposed NCTFETs based on ferroionic crystals as promising devices for generating a stable logic state below the coercive voltage. In addition, tunneling and voltage pinning effects play a key role for enhancement of the transistor’s on–off ratio