Single-layer semiconducting transition metal dichalcogenides
(2H-TMDs)
display robust excitonic photoluminescence emission, which can be
improved by controlled changes to the environment and the chemical
potential of the material. However, a drastic emission quench has
been generally observed when TMDs are stacked in van der Waals heterostructures,
which often favor the nonradiative recombination of photocarriers.
Herein, we achieve an enhancement of the photoluminescence of single-layer
MoS2 on top of van der Waals FePS3. The optimal
energy band alignment of this heterostructure preserves light emission
of MoS2 against nonradiative interlayer recombination processes
and favors the charge transfer from MoS2, an n-type semiconductor,
to FePS3, a p-type narrow-gap semiconductor. The strong
depletion of carriers in the MoS2 layer is evidenced by
a dramatic increase in the spectral weight of neutral excitons, which
is strongly modulated by the thickness of the FePS3 underneath,
leading to the increase of photoluminescence intensity. The present
results demonstrate the potential for the rational design of van der
Waals heterostructures with advanced optoelectronic properties
