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Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications
Authors
T. Baron
M. Kanoun
Frédéric Mazenc
A. Souifi
Publication date
1 January 2004
Publisher
'AIP Publishing'
Abstract
International audienc
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HAL-CEA
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oai:HAL:hal-00477273v1
Last time updated on 12/11/2016
Hal - Université Grenoble Alpes
See this paper in CORE
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oai:HAL:hal-00477273v1
Last time updated on 11/11/2016