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Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 Conductive-Bridging-RAMs and HfO2 Oxide-RAMs
Authors
Y. Bernard
P. Gonon
+5 more
H. Grampeix
V. Jousseaume
C. Mannequin
M. Mougenot
C. Vallee
Publication date
1 January 2010
Publisher
HAL CCSD
Abstract
International audienc
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Hal - Université Grenoble Alpes
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oai:HAL:hal-00625206v1
Last time updated on 11/11/2016
HAL-CEA
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oai:HAL:hal-00625206v1
Last time updated on 12/11/2016
Hal - Université Grenoble Alpes
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:HAL:hal-00669551v1
Last time updated on 11/11/2016
HAL-CEA
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:HAL:hal-00669551v1
Last time updated on 12/11/2016