Design and optimization of IGBT gate drivers for high insulation voltage up to 30kV

Abstract

International audienceIn this article, a design methodology tooptimize IGBT gate drivers for high insulation voltage capability(up to 30kV) is proposed. A Pot core ferrite with circular coilstransformer is used for high insulation capabilities. Theinsulation voltage level is defined by the air gap length and thedielectric material. The pulse width modulation (PWM) signaltransmission and power transmission functions of IGBT gatedriver are studied and optimized. For both functions, theobjective of the studies is to optimize the geometric elements oftransformer and the associated electrical components by the helpof a virtual prototyping tool. Therefore, the optimization resultsare proposed under Pareto fronts: optimization objectives for aset of the barrier insulation thickness. Finally, the experimentalverifications are shown to validate the proposed methodology