This thesis presents an in depth study of semiconductor development using a new process termed Migration Enhanced Afterglow (MEAglow). The MEAglow growth reactor is housed in the Lakehead University Semiconductor Research Lab. Thin films of gallium nitride and indium nitride are produced as well as heterostructures comprised of these
two films and their ternary alloy InGaN. MEAglow is a form of plasma enhanced chemical vapour deposition (PECVD) employing migration enhanced epitaxy (MEE). The heterostructure is being developed for a novel field effect transistor (FET) based on the tunnelling of charge carriers which alter the channel conductivity. The configuration of this unique III-Nitride device should allow the FET to function as normally off in either n-type or p-type operation. Due to the difficulties in growing low temperature GaN, test devices of this abstract design were not previously possible. Further details on the device operation and growth parameters are included.
Samples produced by the research reactor were characterised through x-ray diffraction (XRD), ultraviolet-near infrared-visible spectroscopy (UV-Vis-NIR), Auger spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM).
Film growth is accomplished by an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD). The reactor features a scalable hollow cathode type plasma source.
Data obtained through characterisation is subjected to theoretical treatment which explains much not previously understood behaviour of the GaN films.
Many challenges in III-Nitride film growth have been overcome during this research project. A method of developing structures consisting of InN and GaN within the same system has been proven
