In this study, indium nitride (InN) thin films were grown on flexible substrate by radio fi路equency reactive
sputtering technique. An indium target with purity of99.999% was used. Throughout this work, the RF power and
the gas ratio of argon and nitrogen were maintained constant at 60 W and 40:60 (Ar : Nz), respectively. The
depositions were carried out at temperature of 300 oc under various deposition thickness. As a result, InN films
with various thickness, i.e., 300 nm. 500 nm and 700 nm were produced. Subsequently, the effects of the InN
films thickness on th e structural properties and surface morphology were investigated. X-ray diffraction results
reveal that wunzite InN thin film s were successfully deposited. It was found that InN tilm with thickness of 700
nm exhibits (I 0 I )-preferred orientation and strongest XRD difhaction peak compared to InN films with thickness
of 300 nm and 500 nm. Field emi ss ion scanning electron microsco py and atomic force microscopy results show
that all the InN thin films exhibit smooth and uniform surface morphology but the InN grain size increases with
increasing film thickness. Howevct路. the root mean square surface roughness of the InN films shows little apparent
variations as the film thickness in cr<:ascs. All the findings lead to conclude that the crystalline quality of InN thin films were effectively improved with increasing film thickness
