Simulasi peranti bagi ciri-ciri elektrik dan optik laser pancaran permukaan
rongga tegak (VCSEL) berasaskan GaAs telah diselidiki. Dalam laser sedemikian,
kebocoran arus dan pemisahan lateral arus adalah beberapa masalah utama dalam
rekabentuk VCSEL. Jadi dalam kajian ini, rekabentuk struktur VCSEL te1masuk
struktur kawasan aktif telaga kuantum berbilang (MQWs) diperihalkan dan diselidiki
dengan simulasi peranti Integrated System Engineering Technology Computer Aided
Design (ISETCAD). Parameter struktur VCSEL divariasikan dan dioptimumkan untuk
prestasi tinggi. Kajian pengoptimuman ini melibatkan aspek seperti bilangan pasangan
pemantul teragih Bragg (DBRs), ketebalan telaga kuantum, jumlah telaga, pendopan kecekapan pasangan DBR, ciri haba dan beberapa pendekatan untuk meningkatkan dan mencapai
kecekapan tinggi, arus ambang yang rendah dan kuasa output yang tinggi.
Device simulations for the electrical and optical characteristics of GaAs based
vertical cavity surface emitting lasers (VCSELs) have been investigated. In such lasers,
carrier's leakage and lateral current separation are some of the major problems in
VCSEL design. Thus, in this work the design of VCSEL structures including multi
quantum wells (MQWs) active region are described and investigated by Integrated
System Engineering Technology Computer Aided Design (ISETCAD) device simulator.
The parameters of VCSEL structures are varied and optimized for high performance.
This optimization study involves aspects such as the number of distributed Bragg
reflectors (DBRs) pairs, thickness of quantum wells, wells number, doping of the DBR
pairs, thermal characteristics and several approaches to improve and achieve high
efficiency, low threshold current and high output power
