BaTi_(Hf_Zr)_O_3 thin films were formed on Pt(111)/Ti/SiO_2/Si(100)substrates by pulsed laser deposition using fourth-harmonic-generated light(λ=266nm)of a Nd^ :YAG laser beam. Crystallinity and stoichiometry of the thin films were determined by X-ray diffraction X-ray fluorescence analysis and electron probe microanalysis. Their ferroelectric properties were investigated from electrical measurements. The leakage current density increased from 10^ to 10^ A・cm^with increasing electric field up to 200kV. cm^. The dielectric constant, remanent polarization and coercive field of tghe BaTi_(Hf_Zr)_O_ thin films were estimated to be 120 at 1 kHz, 8.7 μC・cm^ and 127kV・cmrespectively.application/pdfjournal articl
