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Asymmetric Stark Shift in InAs/GaAsP(Q1.18) quantum dots grown on (311)B InP substrate

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Publication date
7 July 2008
Publisher
HAL CCSD

Abstract

We present photocurrent (PC) spectroscopy of InAs/InGaAsP (Q1.18) quantum dots (QD) embedded in a PIN diode grown on InP(311)B substrate. From 300K and 77K spectra we deduce the transition energies for ground state of the dots. These energies are sensitive to applied bias and reveal an asymmetric quantum-confined Stark shift (QCSS) attributed to the presence of a strain-induced field in the dots

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