Improvement of a Vertical Thin Film Transistor Based on Low-Temperature Polycrystalline Silicon Technology by Introduction of an Oxide Barrier between Drain and Source Layers

Authors
Publication date
1 January 2012
Publisher
Electrochemical Society, Inc.

Abstract

International audienc

    Similar works

    Full text

    thumbnail-image

    Available Versions

    HAL-Rennes 1

    redirect
    oaioai:HAL:hal-00772001v1
    Last time updated on 09/11/2016

    Hal-Diderot

    redirect
    oaioai:HAL:hal-00772001v1
    Last time updated on 14/04/2021

    HAL-Univ-Nantes

    redirect
    oaioai:HAL:hal-00772001v1
    Last time updated on 12/11/2016