In the Mixed Finite Element approximation scheme has been used to simulate a consistent hydrodynamical model for electron transport in semiconductors, free of any fitting parameters , based on the Maximum Entropy Principle (MEP) and assuming the Parabolic Band approximation. In this paper we describe an application of the above numerical method in the case of the two dimensional Non-Parabolic MEP energy-transport model. We can consider this paper as a generalization of what has been done in . As done in results of the simulation of 2D-MESFET and 2D-MOSFET Silicon devices are presented
