Wachstum und Charakterisierung von nitrid-basierten Halbleiterstrukturen für optoelektronische Anwendungen: Nanosäulen, Bragg-Reflektoren und Laserdioden
Solid state light sources are present in applications such as Bluray-Players and they are used for communication via optical fiber networks. To achieve or to optimze these devices and to understand the physical properties of the group-III-nitride system fundamental research as well as device-orientated investigations are necessary. The work presented in this thesis was developed in this context. Four different epitaxial growth-topics were attended to. In all cases the final coal was to understand and to improve the growth mechanisms behind the optical devices of our future life. These topics range from the growth in non-polar direction to the realisation of catalyst- and mask-free grown, high quality nanorods. Besides, the work was concentrated on edge-emitting laser-structures, which were deposited on freestanding GaN-substrates and featured quantum dots as active material. Finally, the growth of AlInN-layers for an application in distributed Bragg mirrors was investigated
