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research
Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
Authors
Ana Bengoechea Encabo
Tommaso Brazzini
Fernando Calle Gómez
Miguel Angel Sánchez García
Publication date
1 January 2012
Publisher
Abstract
In the last decade the interest in nitride-based sensors (gas, ions...) and bio-sensors is increased. In the case of ion sensitive FET (ISFET), gate voltages induced by ions adsorbed onto the gate region modulate the source-drain currents
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oai:oa.upm.es:22896
Last time updated on 26/03/2014