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Bulk oxygen in a-silicon nitride and its effect on IR absorption

Abstract

The existence of bulk oxygen in the lattice of silicon nitride is studied. In the study, silicon nitride, primarily ?-phase, is prepared by different methods and either powder or whiskers obtained, depending upon the method of preparation. On characterizing the samples, it is observed that they have almost identical XRD patterns, whereas there IR absorption spectra shows significant differences. This prompted another investigation and its results are presented

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