法德两国同属欧洲大陆的核心国家，更是当今世界格局中颇具影响力的大国。历史上，两国在不同时期都曾一度称雄欧洲，展现强国风范。当今法国人强烈的民族自豪感源自于他们骄傲的光荣历史。宣称“朕即天下”的路易十四曾大扩法国的疆域，使其成为17世纪欧洲最强大的国家。而拿破仑更是雄心勃勃地继续为法国开疆辟土，其帝国在鼎盛时期一度囊括了整个欧洲大陆。当时的法国比历史上任何国家都更接近于控制整个欧洲。德意志国家一向是推动欧洲历史发展的强大力量。神圣罗马帝国也曾经称霸西欧，而18世纪中后期的普鲁士也被视为欧洲强国。因此法德两国的一举一动都可能对欧洲的未来发展产生深刻影响。与此同时，作为邻国，两国因领土的接壤而被紧密...Comme les pays les plus importants sur le continent européen, la France et l’Allemagne sont tous les grandes puissances à l’échelle mondiale. Elles se disputaient l’hégémonie de l’Europe dans les différentes périodes de l’histoire européenne. La grande fierté nationale actuelle des Fran&ccedil;ais dérive de l’histoire glorieuse de la France. A l’époque de Louis XIV, le territoire fran&ccedil;ais e...学位：文学硕士院系专业：外文学院欧洲语言文学系_法语语言文学学号：1212006115035

Ballif, C.

Dabrowski, W.

Despeisse, M.

Jarron, P.

Kaplon, J.

Poltorak, K.

Wyrsch, N.

吕颖

Xiamen University Institutional Repository

Des ennemis héréditaires aux alliés, rapprochement franco-allemand après la Seconde Guerre mondiale

Thin Film on ASIC (TFA) technology combines advantages of two commonly used pixel imaging detectors, namely, Monolithic Active Pixels (MAPs) and Hybrid Pixel detectors. Thanks to direct deposition of a hydrogenated amorphous silicon (a- Si:H) sensor lm on top of the readout ASIC, TFA shows the similarity to MAP imagers, allowing, however, more sophisticated front–end circuitry to extract the signals, like in case of Hybrid Pixel technology. In this paper we present preliminary experimental results of TFA structures, obtained with 10 μm thick hydrogenated amorphous silicon sensors, deposited directly on top of integrated circuit optimized for tracking applications at linear collider experiments. The signal charges delivered by such a-Si:H n-i-p diode are small; about 37 e-/μm for minimum ionizing particles, therefore a low noise, high gain and very low power of the front- end are of primary importance. The developed demonstrator chip, designed in 250 nm CMOS technology, comprises an array of 64 by 64 pixels laid out in 40 μm by 40 μm pitch

Poltorak, K

Ballif, C

Dabrowski, W

Despeisse, M

Jarron, P

Kaplon, J

Wyrschb, N

CERN Document Server

Low noise, low power front end electronics for pixelized TFA sensors

Infoscience - École polytechnique fédérale de Lausanne

Low noise, low power front-end electronics for pixelized TFA sensors1C. Ballif3, W. Dabrowski2, M. Despeisse3, P. Jarron1, J. Kaplon1, K. Poltorak1,2 N. Wyrsch31CERN, Geneva, Switzerland2Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Krakow, Poland3 Ecole Polytechnique Fédérale de Lausanne, EPFL/STI, Neuchatel, Switzerland Thin Film on ASIC technology Front-end electronics, Noise optimisation, Noise measurements, OutlineTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 2 405 nm blue laser results, Conclusions.àA thin film sensor layer is deposited directly on top of the ASIC,àSensors are made of hydrogenated amorphous silicon (a-Si:H),àFull chip area is covered by sensor layer,àIt does not require bump bonding,àLow deposition temperature (around 200 ºC) is compatible TFA – Thin Film on ASIC technologyTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 3with post processing on finished electronics wafers,àDeposition method: VHF PE-CVD (very high frequency plasma enhanced chemical vapor deposition).àTracking detectors for linear colliders , imaging,à Expected charges generated in a-Si:H sensors by MIPs are ~40e-/µmà 10-15 µm thick films of a-Si:H were deposited directly on the demonstrator chip (Amorphous Frame Readout Pixel - AFRP)à Pixel dimension of the demonstrator chip: 40 µm x 40 µm, inputcapacitance :~40fF (including detector capacitance)TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 49/22/2009à Requirements for front end electronics:ü High gain (800mV/fC), ideally in a single stageü Low noise (<30e- ENC), to work with signal to noise ratio ü Low power consumption (10µW/pixel).• Non buffered cascode stage,• Very small feedback capacitor (1.3fF) to ensure very high gain,• Preamplifier  works as a gated integrator with gate time tacq and integration time constant τ,• Reset of the feedback capacitor  is provided by the transistor M4, which is biased with constant voltage at the gate (Vbias),• In the reset phase switchTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 59/22/2009Sreset is open and the resetcurrent is delivered to M4in the feedback loop, In thisphase the circuit operatesas a transimpedanceamplifier. • Non buffered cascode stage,• Very small feedback capacitor (1.3fF) to ensure very high gain,• Preamplifier  works as a gated integrator with gate time tacq and integration time constant τ,• Reset of the feedback capacitor  is provided by the transistor M4, which is biased with constant voltage at the gate (Vbias),• In the reset phase switchTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 69/22/2009Sreset is open and the resetcurrent is delivered to M4in the feedback loop, In thisphase the circuit operatesas a transimpedanceamplifier. • Non buffered cascode stage,• Very small feedback capacitor (1.3fF) to ensure very high gain,• Preamplifier  works as a gated integrator with gate time tacq and integration time constant τ,• Reset of the feedback capacitor  is provided by the transistor M4, which is biased with constant gate voltage (Vbias),• In the reset phase switchTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 79/22/2009Sreset is open and the resetcurrent is delivered to M4in the feedback loop, In thisphase the circuit operatesas a transimpedanceamplifier. • Non buffered cascode stage,• Very small feedback capacitor (1.3fF) to ensure very high gain,• Preamplifier  works as a gated integrator with gate time tacq and integration time constant τ,• Reset of the feedback capacitor is provided by the transistor M4, which is biased with constant gate voltage (Vbias),• In the reset phase switchTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 89/22/2009Sreset is open and the resetcurrent is delivered to M4in the feedback loop, In thisphase the circuit operatesas a transimpedanceamplifier. • Non buffered cascode stage,• Very small feedback capacitor (1.3fF) to ensure very high gain,• Preamplifier  works as a gated integrator with gate time tacq and integration time constant τ,• Reset of the feedback capacitor  is provided by the transistor M4, which is biased with constant gate voltage (Vbias),• In the reset phase switchTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 99/22/2009Sreset is open and the resetcurrent is delivered to M4in the feedback loop, In thisphase the circuit operatesas a transimpedanceamplifier. [1] Reset phase – feedback capacitor is discharged through transistor M4 biased with a constant reset current Ireset (this design ensures lower parasitic injection from the reset signal to the 1.3fF feedback capacitor in comparison with a voltage controlled reset transistor),[2] Acquisition phase – theinput signal is integrated on feedback capacitor Cf and stored on  Cout while switch TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 10Switch OFFSwitch OFFIresetSout is closed. The acquisition time tacq is much longer than integration time constant τ,[3] Readout phase –data are read out from 4096 pixels“frame by frame” by a serial multiplexer.[1] Reset phase – feedback capacitor is discharged through transistor M4 biased with a constant reset current Ireset (this design ensures lower parasitic injection from the reset signal to the 1.3fF feedback capacitor in comparison with a voltage controlled reset transistor),[2] Acquisition phase – theinput signal is integrated on feedback capacitor Cf and stored on  Cout while switch TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 11TWEPP 2009Switch ONSwitch ONSout is closed. The acquisition time tacq is much longer than integration time constant τ,[3] Readout phase –data are read out from 4096 pixels“frame by frame” by a serial multiplexer.[1] Reset phase – feedback capacitor is discharged through transistor M7 biased with a constant reset current Ireset (this design ensures lower parasitic injection from the reset signal to the 1.3fF feedback capacitor in comparison with a voltage controlled reset transistor),[2] Acquisition phase – theinput signal is integrated on feedback capacitor Cf and stored on  Cout while switch S is closed. The acquisition TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 12TWEPP 2009Switch OFFSwitch OFFIresetouttime tacq is much longer than integration time constant τ,[3] Readout phase –data are read out from 4096 pixels“frame by frame” by a serial multiplexer.• Matrix of 64x64 pixels,•Pixel size: 40 µm x 40 µm,• Analog and digital grounds andpower supply busses are separated to reduce the noise in the preamplifier,• Two clock signals to read out rowsand columns of the chip,mmmmTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 13• Master readout clock set to 10 MHz,• Readout time: ~2.5 ms(600ns/pixel),• The AFRP1 chip was designed and manufactured in 0.25 µm CMOS process.4 mm44mmmm• Noise from the cascode transistors M1 and M3, • Noise calculated employing the EKV model (the following noise terms are taken into account: thermal noise, gate inducted current noise, correlation term, and the flicker noise), • The overall signal shaping function Kreadout of the preamplifier is equivalent to Kint(f) • Kgate(f)TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 142int )2(12)2(11)()()(gategategatereadout ftftffKfKfK ++==τπ• The integration time constant τ depends on the bandwidth of the un-buffered cascode stage, which is loaded with the input, output and thefeedback capacitance.• The channel thermal noise of load (M3) and input (M1) transistors dominates:• For un-buffered cascode τ depends on C , C and C capacitances as well as TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 15int f outon gm1 of the input transistor M1 and gds3 of the load transistor M3:•The noise is expected to be below 18 e- ENC,• ID has been chosen to optimize the power consumption and integration time constant τ, which limits minimum acquisition time tacq.ENC as a function of bias current tacq=1 µs, Cint=Cf+Cin+Cg1= 40fF, Cout=120fF.  TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 16• Preamplifier in the reset mode works as a transimpedance amplifier with parallel noise sources from feedback transistor M4, reset transistor M6, as wellas cascode transistors M1 ans M3.• The dominating noise is the channel thermal noise,•Theoretical estimation agrees quite well with measurements performed in thereset phase• This result might suggest that higher values of the reset current are preferable.Reset noise seen in the acquisition phase • Output noise in the reset is fed back to input, sampled during switching to acquisition phase, and then amplified with Preamplifier transfer functions changes between the reset phase and the acquisition phase. To evaluate noise in the frequency domain we use the following approximation:Acquisition phaseReset phaseTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 17acquisition phase gain,• Ratio K = Kvacq/Kvres is introduced to estimate contribution of the reset noise in the acquisition phase.Reset noise seen in the acquisition phase TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 18• The noise originating from the reset phase increases for higher reset currents, • For reset current of 10 nA, reset noise, seen in the acquisition phase is estimated be below 28 e- ENC.ENC as a function of the reset current in the acquisition phaseTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 19• Increasing the acquisition time (tacq) increases contribution of the parallel noise from detector leakage current,• For given τ, tacq should be longer than τ, • This puts some constraint on τ, which affects the preamplifier design,•The measured average leakage current per pixel on a-Si:H sensors bias with 55V is around 1 nA, what indicate the expected noise related to this noise source below 30 e- ENC.Measured leakage current per pixelCalculated noise originating from a-Si diode.Measurement results• The noise was measured in the acquisition phase on:à bare AFRP1 chip,à TFA structure with 10 µm a-Si diode deposited on top,TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 20• Measured noise is compared with calculations• NI PCI-6562 high speed digital input output card with LVDS signaling :– 200 MHz maximum clock rate,– 16 channels with per-channel direction control in single-data-rate mode.TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 21• NI 5112 oscilloscope card,• Labview environment• Analyses made in ROOT environment (http://root.cern.ch).Test results – bare chip AFRP1 chip noise map Distribution of noise on the chipTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 22The noise of redadout pixels with open inputs is very uniform across the whole chip.Measured ENC taken as the most probable noise over 4096 pixelsTest results – bare chip TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 23• Measured noise is slightly higher compared to calculations.• Taking into account top 100 pixels with the best noise performance, the most probable noise is below 40 e- ENCNoise map Distribution of noise on the chip Noise performance – TFA TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 24• Measured noise is significantly higher than expected• We observe very large spread of noise across the chip. Measured ENC taken as the most probable noise over 100 pixelsNoise performance – TFA Measured ENC taken as the most probable noise over 4096 pixelsTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 25• 100 top pixels with the best noise performance are much closer to calcultions• The noise stays below 48 e- ENC for parameters Ireset of 10 nA and tacqof 0.3 µs,Ireset 10nA,t 0.5 µsIreset 10nA,tacq 0.3 µs Distribution of the ENC across 4096 pixels for reset current of 10 nA and different acquisitiontimesTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 26Ireset 10nA,tacq 1 µsacqIreset 10nA,tacq 0.3 µsIreset 100nA,Distribution of the ENC across 4096 pixels for acquisition timeof 0.3 µs and different reset currentsTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 27tacq 0.3 µsIreset 500nA,tacq 0.3 µsCalibration§ No calibration capacitor was implemented on the citcuit in order to keep the noise at low level,§ Calibration with the radiation sources (Fe-55, Sr-90) is difficultdue to very high a-Si diode leakage current (tacq too short to collect acceptable hits statistics),TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 28§ The TFA structure was calibrated with a 405 nm blue laser by comparison to TFA structure based on MacroPad chip measured gain: 713 mV/fC (designed value: 800 mV/fC).405 nm blue laser tests HV 25 VHV 5 V HV 55 V• According to [1] the full depletion bias TFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 29voltage for a-Si sensor is defined as:Vd = 0.48 d2 = 48V for 10µm thick diode,• The signal from the blue laser, measured on TFA structure based on AFRP1 chip, does not increase for bias voltages above 55 V.[1] M. Despeisse et al.Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection, IEEE Transactions On Nuclear Science, Vol. 55,No. 2, 2008, pp. 802-811.§ Noise performance:ü The calculated reset noise behavior, as a function of Ireset, agrees quite wellwith the measurement resultsü Discrepancy in total noise level can be attributed to parasitic capacitance inthe preamplifier structureü The best noise performance was obtained for the reset current of 10 nA. For acquisition times 300 – 500 ns the noise of TFA structure is below 48 e-ENCTFA front-endW. Dabrowski, AGH Kraków TWEPP-09, Paris, September 2009 30ü At present noise performance is limited by the sensor leakage crrent§ High a-Si diode leakage current makes the calibration with radiation sourcedifficult because achievable rates ara low and require long acquisition times§ The TFA structure was calibrated with a 405 nm blue laser by comparison to TFA structure based on Macro Pad chip. As a result the gain of 713 mV/fC was found

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Des ennemis héréditaires aux alliés, rapprochement franco-allemand après la Seconde Guerre mondiale

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