The local environment of implanted 111Ag ( t1/2=7.45d ) in single-crystalline [0001] ZnO was evaluated by means of the perturbed angular correlation (PAC) technique. Following the 60 keV low dose (1×1013 cm−2) 111Ag implantation, the PAC measurements were performed for the as-implanted state and following 30 min in vacuum annealing steps, at temperatures ranging from 200 ºC to 1050 ºC. The results revealed that 42% of the probes are located at defect-free SZn sites (νQ∼ 32 MHz, η=0) in the as-implanted state and that this fraction did not significantly change with annealing. Moreover, a progressive lattice recovery in the near vicinity of the probes was observed. Different EFGs assigned to point defects were furthermore measured and a general modification of their parameters occurred after 600 ºC. The 900 ºC annealing induced the loss of 30% of the 111Ag atoms, 7% of which were located in heavily damaged regions