IBIC microscopy of Helsinki n- & p-type FZ Si diodes selectively irradiated w focused He microbeam

Abstract

Object of the research Study of the radiation hardness of semiconductors Method Use of focused MeV Ion beams to induce the damage and to probe the damage.Samples under study 2° RCM: …. the activity has been focused on the Fz silicon diodes from UniHe, and the study of the other materials and devices distributed among the participants has been postponed to the second phase, following the validation of the theoretical model