Fadil, Ahmed

Iida, Daisuke

Kopylov, Oleksii

Ou, Haiyan

Ou, Yiyu

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement

Online Research Database In Technology

Electrically driven surface plasmon light-emitting diodes - DTU Orbit (09/11/2017) Electrically driven surface plasmon light-emitting diodesWe investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization usedto separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surfaceplasmonic enhancement. General informationState: PublishedOrganisations: Department of Photonics Engineering, Diode Lasers and LED Systems, Centre of Excellence for SiliconPhotonics for Optical Communications, Tokyo University of ScienceAuthors: Fadil, A. (Intern), Ou, Y. (Intern), Iida, D. (Ekstern), Kopylov, O. (Intern), Ou, H. (Intern)Number of pages: 1Publication date: 2016Event: Paper presented at 4th International workshop on LEDs and solar applications, Nagoya, Japan.Main Research Area: Technical/natural sciences Bibliographical noteInvited talk at '4th International workshop on LEDs and solar applications', held at Meijo University, Nagoya, Japan,Mar.30-31, 2016Source: PublicationPreSubmissionSource-ID: 123057207Publication: Research - peer-review › Paper – Annual report year: 2016 

Electrically driven surface plasmon light-emitting diodes

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Electrically driven surface plasmon light-emitting diodes

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Online Research Database In Technology