AMPS-1D (Analysis of Microelectronic and Photonic Structure) simulation program was used to simulate
Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics
was in a good agreement with experimental values. The dependence of the open-circuit voltage
on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the
open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases
when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The
open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections
of these states are small.
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