Proton-radiation damage in Gunn oscillators

Abstract

The irradiation effects of 22 MeV protons on the electrical characteristics of GaAs continuous-wave Gunn oscillators was studied. The radio frequency power output was reduced by 3 decibels at proton fluences in the neighborhood of 1.5 x 10 to the 12th power protons/sq cm. Conductance measurements indicate that the carrier removal rate at high electric fields remained roughly 40 percent less than at low fields. Diode efficiencies of two device groups were found to be monotonically descreasing functions of fluence. Frequency modulation noise was generally unaffected by radiation, but the magnitude of the noise in the noise power spectrum increased significantly. These effects are partially accounted for, in a qualitative fashion, by a model of electron traps having field-dependent net-carrier capture rates and various response times